Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Vce Saturation Max Ib Ic
- 500mV @ 200mA, 2A
- Kurşunsuz
- Lead Free
- Genişlik
- 3.25mm
- Number Of Elements
- 1
- Collector Emitter Voltage Vceo
- 30V
- Çalışma Sıcaklığı
- 150°C TJ
- Pin Sayısı
- 3
- Max Collector Current
- 3A
- Power Dissipation
- 1W
- Ambalaj
- Tube
- Dc Current Gain Hfe Min Ic Vce
- 160 @ 1A 2V
- Current Collector Cutoff Max
- 1μA ICBO
- Transistor Application
- AMPLIFIER
- JESD-609 Kodu
- e3
- Montaj
- Through Hole
- Collector Base Voltage Vcbo
- -40V
- Gain Bandwidth Product
- 80MHz
- Uzunluk
- 8mm
- Yükseklik
- 11mm
- Kurşunsuz Kodu
- yes
- Terminal Sayısı
- 3
- Transistor Type
- PNP
- Collectoremitter Breakdown Voltage
- 30V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Element Material
- SILICON
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
- Akım Değeri
- -3A
- Kılıf / Paket
- TO-225AA, TO-126-3
- Fabrika Tedarik Süresi
- 18 Weeks
- Temel Parça No
- KSB772
- Yayın Yılı
- 2002
- Weight
- 761mg
- Polaritychannel Type
- PNP
- RoHS Durumu
- ROHS3 Compliant
- Terminal Kaplaması
- Tin (Sn)
- Montaj Tipi
- Through Hole
- Element Configuration
- Single
- Voltage Rated Dc
- -30V
- Collectoremitter Saturation Voltage
- -300mV
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