Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vce Saturation Max Ib Ic
- 300mV @ 1mA, 10mA
- Radyasyon Dayanımı
- No
- Kurşunsuz
- Lead Free
- Genişlik
- 3.86mm
- Dc Current Gain Hfe Min Ic Vce
- 300 @ 1mA 6V
- Ambalaj
- Bulk
- Power Dissipation
- 500mW
- Çalışma Sıcaklığı
- 150°C TJ
- Montaj
- Through Hole
- JESD-609 Kodu
- e3
- Terminal Sayısı
- 3
- Yükseklik
- 4.58mm
- Collector Base Voltage Vcbo
- -120V
- Yayın Yılı
- 2004
- Weight
- 179mg
- Collectoremitter Breakdown Voltage
- 120V
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- Akım Değeri
- -50mA
- Terminal Kaplaması
- Tin (Sn)
- Hfemin
- 200
- Reach Svhc
- No SVHC
- Transition Frequency
- 100MHz
- Emitter Base Voltage Vebo
- -5V
- Number Of Elements
- 1
- Collector Emitter Voltage Vceo
- 120V
- Max Collector Current
- 50mA
- Terminal Pozisyonu
- BOTTOM
- Current Collector Cutoff Max
- 1μA
- Pin Sayısı
- 3
- Transistor Application
- AMPLIFIER
- Kurşunsuz Kodu
- yes
- Gain Bandwidth Product
- 100MHz
- Uzunluk
- 4.58mm
- Temel Parça No
- KSA992
- Fabrika Tedarik Süresi
- 7 Weeks
- Transistor Type
- PNP
- Transistor Element Material
- SILICON
- Element Configuration
- Single
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