Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Dissipation Max
- 2W Tc
- Montaj
- Surface Mount
- Parça Durumu
- Active
- Pulsed Drain Currentmax Idm
- 9A
- Turn On Delay Time
- 6 ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Lifecycle Status
- ACTIVE (Last Updated: 4 days ago)
- Rise Time
- 24ns
- Kılıf / Paket
- TO-261-4, TO-261AA
- Case Connection
- DRAIN
- Montaj Tipi
- Surface Mount
- Vgs Max
- ±20V
- Avalanche Energy Rating Eas
- 29 mJ
- Power Dissipation
- 2W
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 21 Weeks
- Pin Sayısı
- 4
- RoHS Durumu
- ROHS3 Compliant
- Fet Type
- N-Channel
- Drain To Source Breakdown Voltage
- 200V
- Weight
- 188mg
- Transistor Application
- SWITCHING
- Gate To Source Voltage Vgs
- 20V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Drive Voltage Max Rds On Min Rds On
- 5V
- ECCN Kodu
- EAR99
- Terminal Formu
- GULL WING
- Fall Time Typ
- 6 ns
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 1.13A
- Input Capacitance Ciss Max Vds
- 430pF @ 25V
- Terminal Sayısı
- 4
- Turn Off Delay Time
- 6 ns
- Rds On Max Id Vgs
- 800m Ω @ 570mA, 5V
- Terminal Pozisyonu
- DUAL
- JESD-609 Kodu
- e3
- Radyasyon Dayanımı
- No
- Terminal Kaplaması
- Tin (Sn)
- Current Continuous Drain Id25
- 1.13A Ta
- Ambalaj
- Tape & Reel (TR)
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