Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drain To Source Breakdown Voltage
- 100V
- Rds On Max Id Vgs
- 40m Ω @ 21.5A, 10V
- Radyasyon Dayanımı
- No
- Current Continuous Drain Id25
- 43A Tc
- RoHS Durumu
- ROHS3 Compliant
- Gate Charge Qg Max Vgs
- 97nC @ 10V
- Terminal Kaplaması
- Tin (Sn)
- Turn On Delay Time
- 17 ns
- Pin Sayısı
- 3
- Lifecycle Status
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- Operating Mode
- ENHANCEMENT MODE
- Vgsth Max Id
- 4V @ 250μA
- ECCN Kodu
- EAR99
- Power Dissipation
- 193W
- JESD-609 Kodu
- e3
- Transistor Element Material
- SILICON
- Kılıf / Paket
- TO-3P-3, SC-65-3
- Kurşunsuz Kodu
- yes
- Direnç
- 40MOhm
- Turn Off Delay Time
- 80 ns
- Element Configuration
- Single
- Weight
- 6.401g
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 1997
- Montaj Tipi
- Through Hole
- Fall Time Typ
- 45 ns
- Continuous Drain Current Id
- 43A
- Rise Time
- 20ns
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Avalanche Energy Rating Eas
- 740 mJ
- Gate To Source Voltage Vgs
- 20V
- Fet Type
- N-Channel
- Terminal Sayısı
- 3
- Power Dissipation Max
- 193W Tc
- Montaj
- Through Hole
- Transistor Application
- SWITCHING
- Ambalaj
- Tube
- Parça Durumu
- Not For New Designs
- Kurşunsuz
- Lead Free
- Number Of Elements
- 1
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