Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Continuous Drain Current Id
- 20A
- Rise Time
- 36ns
- Power Dissipation Max
- 110W Tc
- Ambalaj
- Tape & Reel (TR)
- Direnç
- 27mOhm
- Seri
- UltraFET™
- Vgsth Max Id
- 3V @ 250μA
- Radyasyon Dayanımı
- No
- Terminal Sayısı
- 2
- Turn On Delay Time
- 7.7 ns
- Pin Sayısı
- 3
- Yayın Yılı
- 2001
- Additional Feature
- ULTRA-LOW RESISTANCE
- Element Configuration
- Single
- Jesd30 Code
- R-PSSO-G2
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Number Of Elements
- 1
- RoHS Durumu
- ROHS3 Compliant
- Drain To Source Breakdown Voltage
- 60V
- Gate To Source Voltage Vgs
- 16V
- Rds On Max Id Vgs
- 23m Ω @ 20A, 10V
- Gate Charge Qg Max Vgs
- 46nC @ 10V
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 29 Weeks
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Element Material
- SILICON
- Kurşunsuz
- Lead Free
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Montaj Tipi
- Surface Mount
- JESD-609 Kodu
- e3
- Weight
- 260.37mg
- Input Capacitance Ciss Max Vds
- 1480pF @ 25V
- Jedec95 Code
- TO-252AA
- Vgs Max
- ±16V
- Power Dissipation
- 110W
- Terminal Formu
- GULL WING
- Fall Time Typ
- 56 ns
- Terminal Kaplaması
- Tin (Sn)
- Fet Type
- N-Channel
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