HUFA76429D3ST

Specifications

Operating Mode

ENHANCEMENT MODE

Yüzey Montaj

YES

Configuration

SINGLE WITH BUILT-IN DIODE

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Kurşunsuz Kodu

yes

Current Continuous Drain Id25

20A Tc

Case Connection

DRAIN

Ds Breakdown Voltagemin

60V

Fet Type

N-Channel

Drain Currentmax Abs Id

20A

Terminal Kaplaması

Tin (Sn)

Terminal Formu

GULL WING

Jedec95 Code

TO-252AA

Vgs Max

±16V

Input Capacitance Ciss Max Vds

1480pF @ 25V

Drainsource On Resistancemax

0.029Ohm

Qualification Status

Not Qualified

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Transistor Element Material

SILICON

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

46nC @ 10V

Parça Durumu

Obsolete

Rds On Max Id Vgs

23m Ω @ 20A, 10V

REACH Uyumluluk Kodu

not_compliant

Drain To Source Voltage Vdss

60V

Number Of Elements

1

Çalışma Sıcaklığı

-55°C~175°C TJ

Jesd30 Code

R-PSSO-G2

Additional Feature

ULTRA-LOW RESISTANCE

Yayın Yılı

2001

Terminal Pozisyonu

SINGLE

Terminal Sayısı

2

Vgsth Max Id

3V @ 250μA

Seri

UltraFET™

Ambalaj

Tape & Reel (TR)

Power Dissipation Max

110W Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED