HUF76633S3ST-F085

Specifications

Çalışma Sıcaklığı

-55°C~175°C TJ

Number Of Elements

1

RoHS Durumu

RoHS Compliant

Drain To Source Breakdown Voltage

100V

Gate To Source Voltage Vgs

16V

Transistor Application

SWITCHING

Rds On Max Id Vgs

35m Ω @ 39A, 10V

Gate Charge Qg Max Vgs

63nC @ 10V

Parça Durumu

Obsolete

Continuous Drain Current Id

39A

Tepe Reflow Sıcaklığı (°C)

260

Tepe Reflow Süresi (maks. sn)

30

Rise Time

16ns

Power Dissipation Max

183W Tj

Ambalaj

Tape & Reel (TR)

Seri

Automotive, AEC-Q101, UltraFET™

Vgsth Max Id

3V @ 250μA

Terminal Sayısı

2

Turn On Delay Time

8 ns

Pin Sayısı

3

Element Configuration

Single

Jesd30 Code

R-PSSO-G2

Terminal Kaplaması

MATTE TIN

Fet Type

N-Channel

ECCN Kodu

EAR99

Case Connection

DRAIN

Current Continuous Drain Id25

39A Tc

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Turn Off Delay Time

46 ns

Montaj

Surface Mount

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Avalanche Energy Rating Eas

267 mJ

Weight

1.31247g

Input Capacitance Ciss Max Vds

1810pF @ 25V

Vgs Max

±16V