HUF76633P3-F085

Specifications

Tepe Reflow Sıcaklığı (°C)

260

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Power Dissipation Max

145W Tc

Vgsth Max Id

3V @ 250μA

Ambalaj

Tube

Seri

Automotive, AEC-Q101, UltraFET™

Terminal Sayısı

3

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSFM-T3

Additional Feature

ULTRA LOW RESISTANCE

Number Of Elements

1

Çalışma Sıcaklığı

-55°C~175°C TJ

Drain To Source Voltage Vdss

100V

REACH Uyumluluk Kodu

compliant

Rds On Max Id Vgs

35m Ω @ 39A, 10V

Transistor Application

SWITCHING

Parça Durumu

Obsolete

Gate Charge Qg Max Vgs

67nC @ 10V

Montaj Tipi

Through Hole

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Kılıf / Paket

TO-220-3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

1820pF @ 25V

Drainsource On Resistancemax

0.035Ohm

Jedec95 Code

TO-220AB

Vgs Max

±16V

Case Connection

DRAIN

Ds Breakdown Voltagemin

100V

Terminal Kaplaması

TIN

Drain Currentmax Abs Id

38A

Fet Type

N-Channel

Kurşunsuz Kodu

yes

Current Continuous Drain Id25

39A Tc

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Operating Mode

ENHANCEMENT MODE

Yüzey Montaj

NO

Configuration

SINGLE WITH BUILT-IN DIODE