HUF76629D3ST

Specifications

Transistor Application

SWITCHING

Fabrika Tedarik Süresi

8 Weeks

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

16V

Turn On Delay Time

6.8 ns

Element Configuration

Single

Rise Time

28ns

Vgsth Max Id

3V @ 250μA

Radyasyon Dayanımı

No

Direnç

54mOhm

Voltage Rated Dc

100V

Kurşunsuz Kodu

yes

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Kurşunsuz

Lead Free

Rds On Max Id Vgs

52m Ω @ 20A, 10V

Parça Durumu

Active

Gate Charge Qg Max Vgs

46nC @ 10V

Number Of Elements

1

Drain To Source Breakdown Voltage

100V

Terminal Sayısı

2

Jesd30 Code

R-PSSO-G2

Pin Sayısı

3

Power Dissipation Max

110W Tc

Continuous Drain Current Id

20A

Ambalaj

Tape & Reel (TR)

Seri

UltraFET™

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Turn Off Delay Time

67 ns

Operating Mode

ENHANCEMENT MODE

Montaj

Surface Mount

Case Connection

DRAIN

Terminal Kaplaması

Tin (Sn)

Fet Type

N-Channel

ECCN Kodu

EAR99

Current Continuous Drain Id25

20A Tc

Input Capacitance Ciss Max Vds

1285pF @ 25V

Weight

260.37mg