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Specifications
- Input Capacitance Ciss Max Vds
- 1480pF @ 25V
- Vgs Max
- ±16V
- Power Dissipation
- 110W
- Terminal Formu
- GULL WING
- Fall Time Typ
- 74 ns
- Akım Değeri
- 44A
- Transistor Element Material
- SILICON
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Kurşunsuz
- Lead Free
- Montaj Tipi
- Surface Mount
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Voltage Rated Dc
- 60V
- Turn Off Delay Time
- 30 ns
- Montaj
- Surface Mount
- Operating Mode
- ENHANCEMENT MODE
- ECCN Kodu
- EAR99
- Fet Type
- N-Channel
- Case Connection
- DRAIN
- Current Continuous Drain Id25
- 47A Tc
- Kurşunsuz Kodu
- yes
- Terminal Sayısı
- 2
- Turn On Delay Time
- 13 ns
- Pin Sayısı
- 3
- Element Configuration
- Single
- Jesd30 Code
- R-PSSO-G2
- Gerilim
- 60V
- Continuous Drain Current Id
- 47A
- Rise Time
- 203ns
- Power Dissipation Max
- 110W Tc
- Ambalaj
- Tape & Reel (TR)
- Seri
- UltraFET™
- Direnç
- 22MOhm
- Akım
- 47A
- Vgsth Max Id
- 3V @ 250μA
- Radyasyon Dayanımı
- No
- Rds On Max Id Vgs
- 22m Ω @ 47A, 10V
- Transistor Application
- SWITCHING
- Parça Durumu
- Active
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