Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Turn On Delay Time
- 14 ns
- Element Configuration
- Single
- Uzunluk
- 10.67mm
- Reach Svhc
- No SVHC
- Rise Time
- 117ns
- Direnç
- 14mOhm
- Vgsth Max Id
- 4V @ 250μA
- Radyasyon Dayanımı
- No
- Transistor Application
- SWITCHING
- Fabrika Tedarik Süresi
- 6 Weeks
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- RoHS Durumu
- ROHS3 Compliant
- Gate To Source Voltage Vgs
- 20V
- Transistor Element Material
- SILICON
- Kılıf / Paket
- TO-220-3
- Kurşunsuz
- Lead Free
- Voltage Rated Dc
- 100V
- Yükseklik
- 16.3mm
- Kurşunsuz Kodu
- yes
- Terminal Sayısı
- 3
- Pin Sayısı
- 3
- Yayın Yılı
- 2002
- Gerilim
- 100V
- Continuous Drain Current Id
- 75A
- Power Dissipation Max
- 310W Tc
- Ambalaj
- Tube
- Seri
- UltraFET™
- Akım
- 75A
- Rds On Max Id Vgs
- 14m Ω @ 75A, 10V
- Gate Charge Qg Max Vgs
- 238nC @ 20V
- Parça Durumu
- Active
- Genişlik
- 4.7mm
- Number Of Elements
- 1
- Drain To Source Breakdown Voltage
- 100V
- Weight
- 4.535924g
- Input Capacitance Ciss Max Vds
- 3790pF @ 25V
- Jedec95 Code
- TO-220AB
- Vgs Max
- ±20V
- Power Dissipation
- 310W
- Fall Time Typ
- 97 ns
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