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Specifications
- Ambalaj
- Tube
- Seri
- UltraFET™
- Power Dissipation Max
- 200W Tc
- Continuous Drain Current Id
- 56A
- Pin Sayısı
- 3
- Yayın Yılı
- 2002
- Terminal Sayısı
- 3
- Drain To Source Breakdown Voltage
- 100V
- Number Of Elements
- 1
- Genişlik
- 4.82mm
- Gate Charge Qg Max Vgs
- 130nC @ 20V
- Parça Durumu
- Active
- Rds On Max Id Vgs
- 25m Ω @ 56A, 10V
- Montaj Tipi
- Through Hole
- Threshold Voltage
- 4V
- JESD-609 Kodu
- e3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Akım Değeri
- 56A
- Fall Time Typ
- 25 ns
- Vgs Max
- ±20V
- Power Dissipation
- 200W
- Input Capacitance Ciss Max Vds
- 2000pF @ 25V
- Weight
- 6.39g
- Current Continuous Drain Id25
- 56A Tc
- Contact Plating
- Tin
- Case Connection
- DRAIN
- Fet Type
- N-Channel
- ECCN Kodu
- EAR99
- Operating Mode
- ENHANCEMENT MODE
- Montaj
- Through Hole
- Drive Voltage Max Rds On Min Rds On
- 10V
- Turn Off Delay Time
- 20 ns
- Vgsth Max Id
- 4V @ 250μA
- Radyasyon Dayanımı
- No
- Rise Time
- 60ns
- Nominal Vgs
- 4 V
- Reach Svhc
- No SVHC
- Uzunluk
- 15.87mm
- Element Configuration
- Single
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