Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate To Source Voltage Vgs
- 20V
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Fabrika Tedarik Süresi
- 9 Weeks
- Transistor Application
- SWITCHING
- Radyasyon Dayanımı
- No
- Vgsth Max Id
- 4V @ 250μA
- Direnç
- 7mOhm
- Nominal Vgs
- 4 V
- Rise Time
- 118ns
- Reach Svhc
- No SVHC
- Uzunluk
- 10.67mm
- Element Configuration
- Single
- Turn On Delay Time
- 14 ns
- Kurşunsuz Kodu
- yes
- Yükseklik
- 16.3mm
- Voltage Rated Dc
- 55V
- Kurşunsuz
- Lead Free
- Kılıf / Paket
- TO-220-3
- Transistor Element Material
- SILICON
- Drain To Source Breakdown Voltage
- 55V
- Number Of Elements
- 1
- Genişlik
- 4.7mm
- Parça Durumu
- Active
- Gate Charge Qg Max Vgs
- 275nC @ 20V
- Rds On Max Id Vgs
- 7m Ω @ 75A, 10V
- Seri
- UltraFET™
- Ambalaj
- Tube
- Power Dissipation Max
- 325W Tc
- Continuous Drain Current Id
- 75A
- Yayın Yılı
- 2009
- Pin Sayısı
- 3
- Dual Supply Voltage
- 55V
- Terminal Sayısı
- 3
- Current Continuous Drain Id25
- 75A Tc
- Case Connection
- DRAIN
- ECCN Kodu
- EAR99
- Fet Type
- N-Channel
- Terminal Kaplaması
- Tin (Sn)
- Operating Mode
- ENHANCEMENT MODE
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