Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Power Dissipation Max
- 145W Tc
- Continuous Drain Current Id
- 60A
- Ambalaj
- Tube
- Gate To Source Voltage Vgs
- 20V
- Vgsth Max Id
- 4V @ 250μA
- Akım Değeri
- 60A
- Current Continuous Drain Id25
- 60A Tc
- Turn On Delay Time
- 9 ns
- Terminal Kaplaması
- Tin (Sn)
- Rds On Max Id Vgs
- 19m Ω @ 60A, 10V
- Gate Charge Qg Max Vgs
- 85nC @ 20V
- Pin Sayısı
- 3
- Voltage Rated Dc
- 55V
- Parça Durumu
- Active
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Weight
- 1.8g
- Montaj
- Through Hole
- Fabrika Tedarik Süresi
- 9 Weeks
- Kurşunsuz
- Lead Free
- Power Dissipation
- 145W
- Transistor Element Material
- SILICON
- Drive Voltage Max Rds On Min Rds On
- 10V
- Vgs Max
- ±20V
- Jedec95 Code
- TO-220AB
- Seri
- UltraFET™
- Input Capacitance Ciss Max Vds
- 1300pF @ 25V
- Kurşunsuz Kodu
- yes
- Yayın Yılı
- 2005
- Radyasyon Dayanımı
- No
- Fet Type
- N-Channel
- Transistor Application
- SWITCHING
- ECCN Kodu
- EAR99
- Number Of Elements
- 1
- Fall Time Typ
- 45 ns
- Rise Time
- 90ns
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- TO-220-3
- Operating Mode
- ENHANCEMENT MODE
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