Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Uzunluk
- 2.92mm
- Max Collector Current
- 2A
- Terminal Pozisyonu
- DUAL
- Parça Durumu
- Obsolete
- Hfemin
- 300
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Collector Emitter Voltage Vceo
- 50V
- Collector Base Voltage Vcbo
- 50V
- Max Power Dissipation
- 500mW
- Akım Değeri
- 2A
- Yayın Yılı
- 2008
- Number Of Elements
- 1
- Contact Plating
- Tin
- Yükseklik
- 940μm
- Element Configuration
- Single
- Gain Bandwidth Product
- 100MHz
- Radyasyon Dayanımı
- No
- Max Breakdown Voltage
- 25V
- Weight
- 30mg
- Transistor Element Material
- SILICON
- Fabrika Tedarik Süresi
- 6 Weeks
- Vce Saturation Max Ib Ic
- 320mV @ 50mA, 2A
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Terminal Formu
- GULL WING
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Emitter Base Voltage Vebo
- 5V
- ECCN Kodu
- EAR99
- JESD-609 Kodu
- e3
- Transistor Application
- AMPLIFIER
- Transistor Type
- NPN
- Temel Parça No
- FSB619
- Montaj Tipi
- Surface Mount
- Genişlik
- 1.4mm
- Power Dissipation
- 500mW
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kurşunsuz Kodu
- yes
- Current Collector Cutoff Max
- 100nA
- Transition Frequency
- 100MHz
- Kurşunsuz
- Lead Free
- Terminal Sayısı
- 3
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