FQU9N25TU

Specifications

Power Dissipation Max

2.5W Ta 55W Tc

Current Continuous Drain Id25

7.4A Tc

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.42Ohm

Transistor Application

SWITCHING

Terminal Sayısı

3

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Ambalaj

Tube

Voltage Rated Dc

250V

Turn On Delay Time

13 ns

Montaj

Through Hole

Fabrika Tedarik Süresi

6 Weeks

Input Capacitance Ciss Max Vds

700pF @ 25V

Pin Sayısı

3

Transistor Element Material

SILICON

Yayın Yılı

2013

Terminal Kaplaması

Tin (Sn)

Parça Durumu

Active

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

20nC @ 10V

Fet Type

N-Channel

Power Dissipation

2.5W

Element Configuration

Single

Continuous Drain Current Id

7.4A

Kurşunsuz

Lead Free

Drain To Source Breakdown Voltage

250V

Fall Time Typ

45 ns

Rise Time

105ns

JESD-609 Kodu

e3

Montaj Tipi

Through Hole

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

30V

Rds On Max Id Vgs

420m Ω @ 3.7A, 10V

Radyasyon Dayanımı

No

Pulsed Drain Currentmax Idm

29.6A

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz Kodu

yes