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Same-day dispatch from stock
Genuine parts
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Support
Technical team support
Specifications
- Seri
- QFET®
- Lifecycle Status
- ACTIVE (Last Updated: 6 days ago)
- Vgsth Max Id
- 4V @ 250μA
- Weight
- 343.08mg
- Vgs Max
- ±30V
- Akım Değeri
- 5A
- Turn Off Delay Time
- 38 ns
- Kurşunsuz Kodu
- yes
- Kılıf / Paket
- TO-251-3 Short Leads, IPak, TO-251AA
- Drive Voltage Max Rds On Min Rds On
- 10V
- Radyasyon Dayanımı
- No
- Gate To Source Voltage Vgs
- 30V
- Rds On Max Id Vgs
- 2.5 Ω @ 1.4A, 10V
- Montaj Tipi
- Through Hole
- Operating Mode
- ENHANCEMENT MODE
- JESD-609 Kodu
- e3
- Rise Time
- 42ns
- Fall Time Typ
- 46 ns
- Kurşunsuz
- Lead Free
- Drain To Source Breakdown Voltage
- 600V
- Continuous Drain Current Id
- 2.8A
- Element Configuration
- Single
- Power Dissipation
- 2.5W
- Fet Type
- N-Channel
- Gate Charge Qg Max Vgs
- 19nC @ 10V
- Direnç
- 2.5Ohm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Kaplaması
- Tin (Sn)
- Yayın Yılı
- 2013
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Pin Sayısı
- 3
- Fabrika Tedarik Süresi
- 4 Weeks
- Input Capacitance Ciss Max Vds
- 670pF @ 25V
- Montaj
- Through Hole
- Voltage Rated Dc
- 600V
- Turn On Delay Time
- 10 ns
- Ambalaj
- Tube
- Number Of Elements
- 1
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