FQU3N50CTU

Specifications

Element Configuration

Single

Continuous Drain Current Id

2.5A

Kurşunsuz

Lead Free

Drain To Source Breakdown Voltage

500V

Avalanche Energy Rating Eas

200 mJ

Fall Time Typ

25 ns

JESD-609 Kodu

e3

Rise Time

25ns

Gate To Source Voltage Vgs

30V

Rds On Max Id Vgs

2.5 Ω @ 1.25A, 10V

Montaj Tipi

Through Hole

Operating Mode

ENHANCEMENT MODE

Radyasyon Dayanımı

No

Kurşunsuz Kodu

yes

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Drive Voltage Max Rds On Min Rds On

10V

Vgs Max

±30V

Turn Off Delay Time

35 ns

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

Vgsth Max Id

4V @ 250μA

Weight

343.08mg

Seri

QFET®

Power Dissipation Max

35W Tc

Current Continuous Drain Id25

2.5A Tc

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Terminal Sayısı

3

RoHS Durumu

ROHS3 Compliant

Ambalaj

Tube

Number Of Elements

1

Turn On Delay Time

10 ns

Montaj

Through Hole

Pin Sayısı

3

Input Capacitance Ciss Max Vds

365pF @ 25V

Fabrika Tedarik Süresi

5 Weeks

Terminal Kaplaması

Tin (Sn)

Yayın Yılı

2013

Parça Durumu

Active

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)