FQU2N60CTU

Specifications

REACH Uyumluluk Kodu

not_compliant

Montaj

Through Hole

Fabrika Tedarik Süresi

6 Weeks

Input Capacitance Ciss Max Vds

235pF @ 25V

Ambalaj

Tube

Number Of Elements

1

Turn On Delay Time

9 ns

Voltage Rated Dc

600V

Fet Type

N-Channel

Gate Charge Qg Max Vgs

12nC @ 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Active

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

6.6mm

Continuous Drain Current Id

1.9A

Rise Time

25ns

Rds On Max Id Vgs

4.7 Ω @ 950mA, 10V

Montaj Tipi

Through Hole

Drain To Source Breakdown Voltage

600V

Contact Plating

Tin

Fall Time Typ

28 ns

Kurşunsuz Kodu

yes

Drive Voltage Max Rds On Min Rds On

10V

Pulsed Drain Currentmax Idm

7.6A

Vgs Max

±30V

Current Continuous Drain Id25

1.9A Tc

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Qualification Status

Not Qualified

Power Dissipation Max

2.5W Ta 44W Tc

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

3

Genişlik

2.3mm

Pin Sayısı

3

Direnç

4.7Ohm

Power Dissipation

2.5W

Yayın Yılı

2005

Element Configuration

Single