FQU2N50BTU-WS

Specifications

Terminal Sayısı

3

RoHS Durumu

ROHS3 Compliant

Power Dissipation Max

2.5W Ta 30W Tc

Current Continuous Drain Id25

1.6A Tc

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Parça Durumu

Active

Terminal Kaplaması

Tin (Sn)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate Charge Qg Max Vgs

8nC @ 10V

Fet Type

N-Channel

Power Dissipation

2.5W

Number Of Elements

1

Ambalaj

Tube

Turn On Delay Time

6 ns

Montaj

Through Hole

Fabrika Tedarik Süresi

8 Weeks

Input Capacitance Ciss Max Vds

230pF @ 25V

Pin Sayısı

3

Drain To Source Breakdown Voltage

500V

Fall Time Typ

20 ns

Rise Time

25ns

JESD-609 Kodu

e3

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Through Hole

Gate To Source Voltage Vgs

30V

Rds On Max Id Vgs

5.3 Ω @ 800mA, 10V

Element Configuration

Single

Continuous Drain Current Id

1.6A

Turn Off Delay Time

10 ns

Vgs Max

±30V

Vgsth Max Id

3.7V @ 250μA

Weight

343.08mg

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Seri

QFET®

Radyasyon Dayanımı

No

Pulsed Drain Currentmax Idm

6.4A

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Drive Voltage Max Rds On Min Rds On

10V