Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 3
- Genişlik
- 2.3mm
- Power Dissipation Max
- 2.5W Ta 28W Tc
- Current Continuous Drain Id25
- 1A Tc
- Transistor Application
- SWITCHING
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2013
- Terminal Kaplaması
- Tin (Sn)
- Direnç
- 11.5Ohm
- Power Dissipation
- 2.5W
- Pin Sayısı
- 3
- Kurşunsuz
- Lead Free
- JESD-609 Kodu
- e3
- Gate To Source Voltage Vgs
- 30V
- Operating Mode
- ENHANCEMENT MODE
- Element Configuration
- Single
- Yükseklik
- 6.1mm
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Turn Off Delay Time
- 13 ns
- Akım Değeri
- 1A
- Lifecycle Status
- ACTIVE (Last Updated: 5 days ago)
- Weight
- 343.08mg
- Vgsth Max Id
- 4V @ 250μA
- Seri
- QFET®
- Kılıf / Paket
- TO-251-3 Short Leads, IPak, TO-251AA
- REACH Uyumluluk Kodu
- not_compliant
- Drain Currentmax Abs Id
- 1A
- Threshold Voltage
- 4V
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Type
- N-Channel
- Gate Charge Qg Max Vgs
- 6.2nC @ 10V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Ambalaj
- Tube
- Number Of Elements
- 1
- Voltage Rated Dc
- 600V
- Turn On Delay Time
- 7 ns
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