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Support
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Specifications
- Pulsed Drain Currentmax Idm
- 48A
- Drive Voltage Max Rds On Min Rds On
- 10V
- Kurşunsuz Kodu
- yes
- Radyasyon Dayanımı
- No
- Vgs Max
- ±25V
- Continuous Drain Current Id
- -12A
- Uzunluk
- 6.8mm
- Montaj Tipi
- Through Hole
- Rds On Max Id Vgs
- 135m Ω @ 6A, 10V
- Rise Time
- 100ns
- Reach Svhc
- No SVHC
- Fall Time Typ
- 60 ns
- Contact Plating
- Tin
- Drain To Source Breakdown Voltage
- -60V
- Input Capacitance Ciss Max Vds
- 900pF @ 25V
- Fabrika Tedarik Süresi
- 7 Weeks
- Montaj
- Through Hole
- Turn On Delay Time
- 13 ns
- Voltage Rated Dc
- -60V
- Number Of Elements
- 1
- Ambalaj
- Tube
- Gate Charge Qg Max Vgs
- 27nC @ 10V
- Fet Type
- P-Channel
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- Threshold Voltage
- -4V
- Kılıf / Paket
- TO-251-3 Short Leads, IPak, TO-251AA
- Seri
- QFET®
- Vgsth Max Id
- 4V @ 250μA
- Weight
- 343.08mg
- Lifecycle Status
- ACTIVE (Last Updated: 5 days ago)
- Turn Off Delay Time
- 22 ns
- Akım Değeri
- -12A
- Yükseklik
- 7.57mm
- Element Configuration
- Single
- Operating Mode
- ENHANCEMENT MODE
- Gate To Source Voltage Vgs
- 25V
- JESD-609 Kodu
- e3
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