Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Threshold Voltage
- 2V
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fet Type
- N-Channel
- Gate Charge Qg Max Vgs
- 12nC @ 5V
- Ambalaj
- Tube
- Number Of Elements
- 1
- Voltage Rated Dc
- 100V
- Turn On Delay Time
- 7.5 ns
- Montaj
- Through Hole
- Fabrika Tedarik Süresi
- 5 Weeks
- Input Capacitance Ciss Max Vds
- 520pF @ 25V
- Drain To Source Breakdown Voltage
- 100V
- Avalanche Energy Rating Eas
- 95 mJ
- Fall Time Typ
- 72 ns
- Reach Svhc
- No SVHC
- Rise Time
- 220ns
- Rds On Max Id Vgs
- 180m Ω @ 5A, 10V
- Montaj Tipi
- Through Hole
- Uzunluk
- 6.6mm
- Continuous Drain Current Id
- 10A
- Vgs Max
- ±20V
- Radyasyon Dayanımı
- No
- Kurşunsuz Kodu
- yes
- Drive Voltage Max Rds On Min Rds On
- 5V 10V
- Pulsed Drain Currentmax Idm
- 40A
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 3
- Genişlik
- 2.3mm
- Power Dissipation Max
- 2.5W Ta 40W Tc
- Current Continuous Drain Id25
- 10A Tc
- Transistor Application
- SWITCHING
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2000
- Terminal Kaplaması
- Tin (Sn)
- Direnç
- 180MOhm
- Power Dissipation
- 2.5W
- Pin Sayısı
- 3
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