Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pin Sayısı
- 3
- Terminal Kaplaması
- Tin (Sn)
- Yayın Yılı
- 2014
- Drain To Source Voltage Vdss
- 60V
- Power Dissipation
- 2.5W
- Recovery Time
- 83 ns
- Power Dissipation Max
- 2.5W Ta 38W Tc
- ECCN Kodu
- EAR99
- Transistor Application
- SWITCHING
- Current Continuous Drain Id25
- 9.4A Tc
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 3
- Genişlik
- 2.3mm
- Kılıf / Paket
- TO-251-3 Short Leads, IPak, TO-251AA
- Lifecycle Status
- ACTIVE (Last Updated: 5 days ago)
- Vgsth Max Id
- 4V @ 250μA
- Weight
- 343.08mg
- Turn Off Delay Time
- 15 ns
- Akım Değeri
- -9.4A
- Seri
- QFET®
- Yükseklik
- 6.1mm
- Element Configuration
- Single
- Kurşunsuz
- Lead Free
- Gate To Source Voltage Vgs
- 30V
- Operating Mode
- ENHANCEMENT MODE
- JESD-609 Kodu
- e3
- Voltage Rated Dc
- -60V
- Turn On Delay Time
- 6.5 ns
- Ambalaj
- Tube
- Number Of Elements
- 1
- Input Capacitance Ciss Max Vds
- 550pF @ 25V
- Fabrika Tedarik Süresi
- 4 Weeks
- Montaj
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Fet Type
- P-Channel
- Gate Charge Qg Max Vgs
- 17nC @ 10V
- Threshold Voltage
- -4V
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