FQU10N20CTU

Specifications

Radyasyon Dayanımı

No

Kurşunsuz Kodu

yes

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Drive Voltage Max Rds On Min Rds On

10V

Vgs Max

±30V

Akım Değeri

7.8A

Turn Off Delay Time

70 ns

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

Vgsth Max Id

4V @ 250μA

Weight

343.08mg

Seri

QFET®

Element Configuration

Single

Continuous Drain Current Id

7.8A

Kurşunsuz

Lead Free

Drain To Source Breakdown Voltage

200V

Fall Time Typ

72 ns

Rise Time

92ns

Gate To Source Voltage Vgs

30V

Rds On Max Id Vgs

360m Ω @ 3.9A, 10V

Montaj Tipi

Through Hole

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Number Of Elements

1

Voltage Rated Dc

200V

Turn On Delay Time

11 ns

Montaj

Through Hole

Pin Sayısı

3

Fabrika Tedarik Süresi

9 Weeks

Input Capacitance Ciss Max Vds

510pF @ 25V

Yayın Yılı

1998

Parça Durumu

Active

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Fet Type

N-Channel

Gate Charge Qg Max Vgs

26nC @ 10V

Power Dissipation

50W

Power Dissipation Max

50W Tc

Current Continuous Drain Id25

7.8A Tc

Transistor Application

SWITCHING