Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 4
- Genişlik
- 3.56mm
- ECCN Kodu
- EAR99
- Transistor Application
- SWITCHING
- Current Continuous Drain Id25
- 1.7A Tc
- Power Dissipation Max
- 2W Tc
- Max Junction Temperature Tj
- 150°C
- Power Dissipation
- 2W
- Direnç
- 350mOhm
- Yayın Yılı
- 2017
- Pin Sayısı
- 3
- Jesd30 Code
- R-PDSO-G4
- Gate To Source Voltage Vgs
- 20V
- Operating Mode
- ENHANCEMENT MODE
- JESD-609 Kodu
- e3
- Terminal Formu
- GULL WING
- Kurşunsuz
- Lead Free
- Yükseklik
- 1.8mm
- Element Configuration
- Single
- Case Connection
- DRAIN
- Seri
- QFET®
- Number Of Channels
- 1
- Terminal Pozisyonu
- DUAL
- Lifecycle Status
- ACTIVE (Last Updated: 4 days ago)
- Vgsth Max Id
- 2V @ 250μA
- Weight
- 188mg
- Turn Off Delay Time
- 17 ns
- Akım Değeri
- 1.7A
- Kılıf / Paket
- TO-261-4, TO-261AA
- Threshold Voltage
- 2V
- Fet Type
- N-Channel
- Gate Charge Qg Max Vgs
- 6nC @ 5V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Fabrika Tedarik Süresi
- 18 Weeks
- Input Capacitance Ciss Max Vds
- 290pF @ 25V
- Montaj
- Surface Mount
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