Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Threshold Voltage
- -4V
- Drain Currentmax Abs Id
- 1A
- Input Capacitance Ciss Max Vds
- 250pF @ 25V
- Fabrika Tedarik Süresi
- 24 Weeks
- Montaj
- Surface Mount
- Turn On Delay Time
- 9 ns
- Voltage Rated Dc
- -100V
- Number Of Elements
- 1
- Ambalaj
- Tape & Reel (TR)
- Gate Charge Qg Max Vgs
- 8.2nC @ 10V
- Fet Type
- P-Channel
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- Continuous Drain Current Id
- 1mA
- Uzunluk
- 6.5mm
- Montaj Tipi
- Surface Mount
- Rds On Max Id Vgs
- 1.05 Ω @ 500mA, 10V
- Rise Time
- 70ns
- Reach Svhc
- No SVHC
- Fall Time Typ
- 30 ns
- Contact Plating
- Tin
- Avalanche Energy Rating Eas
- 55 mJ
- Drain To Source Breakdown Voltage
- -100V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Pulsed Drain Currentmax Idm
- 4A
- Kurşunsuz Kodu
- yes
- Radyasyon Dayanımı
- No
- Vgs Max
- ±30V
- Transistor Application
- SWITCHING
- ECCN Kodu
- EAR99
- Current Continuous Drain Id25
- 1A Tc
- Power Dissipation Max
- 2W Tc
- Genişlik
- 3.56mm
- Terminal Sayısı
- 4
- RoHS Durumu
- ROHS3 Compliant
- Jesd30 Code
- R-PDSO-G4
- Pin Sayısı
- 3
- Power Dissipation
- 2W
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