FQT3P20TF

Specifications

Drain Currentmax Abs Id

0.67A

Parça Durumu

Active

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Type

P-Channel

Gate Charge Qg Max Vgs

8nC @ 10V

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Voltage Rated Dc

-200V

Turn On Delay Time

8.5 ns

Montaj

Surface Mount

Fabrika Tedarik Süresi

18 Weeks

Input Capacitance Ciss Max Vds

250pF @ 25V

Drain To Source Breakdown Voltage

-200V

Fall Time Typ

25 ns

Rise Time

35ns

Rds On Max Id Vgs

2.7 Ω @ 335mA, 10V

Montaj Tipi

Surface Mount

Uzunluk

6.5mm

Continuous Drain Current Id

670mA

Vgs Max

±30V

Radyasyon Dayanımı

No

Kurşunsuz Kodu

yes

Drive Voltage Max Rds On Min Rds On

10V

Pulsed Drain Currentmax Idm

2.7A

Terminal Sayısı

4

RoHS Durumu

ROHS3 Compliant

Genişlik

3.56mm

Power Dissipation Max

2.5W Tc

Current Continuous Drain Id25

670mA Tc

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Terminal Kaplaması

Tin (Sn)

Yayın Yılı

2001

Direnç

2.7Ohm

Drain To Source Voltage Vdss

200V

Power Dissipation

2.5W

Jesd30 Code

R-PDSO-G4

Kurşunsuz

Lead Free