Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- N-Channel
- Gate Charge Qg Max Vgs
- 7.2nC @ 10V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Montaj
- Surface Mount
- Input Capacitance Ciss Max Vds
- 195pF @ 25V
- Fabrika Tedarik Süresi
- 10 Weeks
- Ambalaj
- Tape & Reel (TR)
- Number Of Elements
- 1
- Turn On Delay Time
- 10 ns
- Threshold Voltage
- 5V
- REACH Uyumluluk Kodu
- not_compliant
- Drain Currentmax Abs Id
- 0.0002A
- Feedback Capmax Crss
- 5 pF
- Vgs Max
- ±30V
- Kurşunsuz Kodu
- yes
- Drive Voltage Max Rds On Min Rds On
- 10V
- Reach Svhc
- No SVHC
- Rise Time
- 25ns
- Rds On Max Id Vgs
- 20 Ω @ 100mA, 10V
- Montaj Tipi
- Surface Mount
- Drain To Source Breakdown Voltage
- 800V
- Fall Time Typ
- 25 ns
- Continuous Drain Current Id
- 200mA
- Power Dissipation
- 2.1W
- Terminal Kaplaması
- Tin (Sn)
- Pin Sayısı
- 3
- Jesd30 Code
- R-PDSO-G4
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 4
- Current Continuous Drain Id25
- 200mA Tc
- Transistor Application
- SWITCHING
- Power Dissipation Max
- 2.1W Tc
- Seri
- QFET®
- Turn Off Delay Time
- 15 ns
- Terminal Pozisyonu
- DUAL
- Lifecycle Status
- ACTIVE (Last Updated: 4 days ago)
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