FQT1N60CTF-WS

Specifications

Drive Voltage Max Rds On Min Rds On

10V

Kılıf / Paket

TO-261-4, TO-261AA

Kurşunsuz Kodu

yes

Seri

QFET®

Vgs Max

±30V

Vgsth Max Id

4V @ 250μA

Terminal Pozisyonu

DUAL

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

DRAIN

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Operating Mode

ENHANCEMENT MODE

Rds On Max Id Vgs

11.5 Ω @ 100mA, 10V

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

170pF @ 25V

Fabrika Tedarik Süresi

17 Weeks

Jesd30 Code

R-PDSO-G4

Number Of Elements

1

Yüzey Montaj

YES

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Gate Charge Qg Max Vgs

6.2nC @ 10V

Fet Type

N-Channel

Drain To Source Voltage Vdss

600V

Transistor Element Material

SILICON

Terminal Kaplaması

Tin (Sn)

Parça Durumu

Active

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Continuous Drain Id25

200mA Tc

Transistor Application

SWITCHING

Qualification Status

Not Qualified

Ds Breakdown Voltagemin

600V

Feedback Capmax Crss

6 pF

Power Dissipation Max

2.1W Tc

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

4

Drain Currentmax Abs Id

0.2A