FQPF9P25

Specifications

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

24A

Drain To Source Voltage Vdss

250V

Terminal Pozisyonu

SINGLE

Drainsource On Resistancemax

0.62Ohm

Rds On Max Id Vgs

620m Ω @ 3A, 10V

Avalanche Energy Rating Eas

650 mJ

Montaj Tipi

Through Hole

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

Drain Currentmax Abs Id

6A

Gate Charge Qg Max Vgs

38nC @ 10V

Fet Type

P-Channel

Input Capacitance Ciss Max Vds

1180pF @ 25V

Kılıf / Paket

TO-220-3 Full Pack

Power Dissipation Max

50W Tc

ECCN Kodu

EAR99

Vgsth Max Id

5V @ 250μA

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

ISOLATED

HTS Kodu

8541.29.00.95

Transistor Application

SWITCHING

Qualification Status

Not Qualified

Fabrika Tedarik Süresi

4 Weeks

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2013

RoHS Durumu

ROHS3 Compliant

Vgs Max

±30V

Ds Breakdown Voltagemin

250V

Yüzey Montaj

NO

JESD-609 Kodu

e3

Parça Durumu

Active

Jesd30 Code

R-PSFM-T3

Seri

QFET®

Ambalaj

Tube