FQPF9N50

Specifications

Input Capacitance Ciss Max Vds

1450pF @ 25V

Kılıf / Paket

TO-220-3 Full Pack

Power Dissipation Max

50W Tc

Fet Type

N-Channel

Gate Charge Qg Max Vgs

36nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Montaj Tipi

Through Hole

Avalanche Energy Rating Eas

360 mJ

Kurşunsuz Kodu

yes

Drain Currentmax Abs Id

9A

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

36A

Drainsource On Resistancemax

0.85Ohm

Terminal Pozisyonu

SINGLE

Drain To Source Voltage Vdss

500V

Rds On Max Id Vgs

730m Ω @ 2.65A, 10V

Jesd30 Code

R-PSFM-T3

Current Continuous Drain Id25

5.3A Tc

Ambalaj

Tube

Seri

QFET®

Number Of Elements

1

REACH Uyumluluk Kodu

compliant

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Yayın Yılı

2000

Jedec95 Code

TO-220AB

Vgs Max

±30V

Ds Breakdown Voltagemin

500V

Parça Durumu

Obsolete

Yüzey Montaj

NO

JESD-609 Kodu

e3

Case Connection

ISOLATED

HTS Kodu

8541.29.00.95

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Application

SWITCHING

Qualification Status

Not Qualified

ECCN Kodu

EAR99

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

3