Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kurşunsuz
- Lead Free
- Transistor Element Material
- SILICON
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yükseklik
- 9.19mm
- Kurşunsuz Kodu
- yes
- Gate To Source Voltage Vgs
- 30V
- Fet Type
- N-Channel
- Kılıf / Paket
- TO-220-3 Full Pack
- Montaj
- Through Hole
- Drive Voltage Max Rds On Min Rds On
- 10V
- Turn On Delay Time
- 15 ns
- Drain To Source Breakdown Voltage
- 250V
- Terminal Kaplaması
- Tin (Sn)
- Uzunluk
- 10.16mm
- Fabrika Tedarik Süresi
- 5 Weeks
- Fall Time Typ
- 65 ns
- Parça Durumu
- Active
- Yayın Yılı
- 2004
- Radyasyon Dayanımı
- No
- Element Configuration
- Single
- RoHS Durumu
- ROHS3 Compliant
- Jedec95 Code
- TO-220AB
- Akım Değeri
- 8.8A
- Genişlik
- 4.7mm
- Seri
- QFET®
- Rds On Max Id Vgs
- 430m Ω @ 4.4A, 10V
- Continuous Drain Current Id
- 8.8A
- Avalanche Energy Rating Eas
- 285 mJ
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Gate Charge Qg Max Vgs
- 35nC @ 10V
- Power Dissipation Max
- 38W Tc
- Voltage Rated Dc
- 250V
- Input Capacitance Ciss Max Vds
- 710pF @ 25V
- Pin Sayısı
- 3
- ECCN Kodu
- EAR99
- Vgsth Max Id
- 4V @ 250μA
- Direnç
- 430MOhm
- Terminal Sayısı
- 3
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