FQPF6N80T

Specifications

Yükseklik

16.07mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Through Hole

Kurşunsuz Kodu

yes

Transistor Element Material

SILICON

Kurşunsuz

Lead Free

Kılıf / Paket

TO-220-3 Full Pack

Fet Type

N-Channel

Gate To Source Voltage Vgs

30V

Uzunluk

10.36mm

Fabrika Tedarik Süresi

7 Weeks

Drain To Source Breakdown Voltage

800V

Terminal Kaplaması

Tin (Sn)

Drive Voltage Max Rds On Min Rds On

10V

Turn On Delay Time

30 ns

Montaj

Through Hole

Genişlik

4.9mm

Seri

QFET®

Element Configuration

Single

Radyasyon Dayanımı

No

Yayın Yılı

2013

RoHS Durumu

ROHS3 Compliant

Jedec95 Code

TO-220AB

Akım Değeri

3.3A

Fall Time Typ

45 ns

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Avalanche Energy Rating Eas

680 mJ

Continuous Drain Current Id

3.3A

Rds On Max Id Vgs

1.95 Ω @ 1.65A, 10V

Input Capacitance Ciss Max Vds

1500pF @ 25V

Power Dissipation Max

51W Tc

Voltage Rated Dc

800V

Gate Charge Qg Max Vgs

31nC @ 10V

Rise Time

70ns

Case Connection

ISOLATED

Weight

2.27g

Transistor Application

SWITCHING

Power Dissipation

51W