Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yayın Yılı
- 2003
- Radyasyon Dayanımı
- No
- Element Configuration
- Single
- Akım Değeri
- 5A
- Jedec95 Code
- TO-220AB
- RoHS Durumu
- ROHS3 Compliant
- Parça Durumu
- Active
- Fall Time Typ
- 48 ns
- Genişlik
- 4.7mm
- Seri
- QFET®
- Drain To Source Breakdown Voltage
- 500V
- Terminal Kaplaması
- Tin (Sn)
- Montaj
- Through Hole
- Drive Voltage Max Rds On Min Rds On
- 10V
- Turn On Delay Time
- 12 ns
- Uzunluk
- 10.16mm
- Fabrika Tedarik Süresi
- 4 Weeks
- Fet Type
- N-Channel
- Gate To Source Voltage Vgs
- 30V
- Kılıf / Paket
- TO-220-3 Full Pack, Formed Leads
- Transistor Element Material
- SILICON
- Kurşunsuz
- Lead Free
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Through Hole
- Yükseklik
- 15.87mm
- Kurşunsuz Kodu
- yes
- Vgs Max
- ±30V
- JESD-609 Kodu
- e3
- Lifecycle Status
- ACTIVE (Last Updated: 4 days ago)
- Ambalaj
- Tube
- Current Continuous Drain Id25
- 5A Tc
- Turn Off Delay Time
- 50 ns
- Number Of Elements
- 1
- ECCN Kodu
- EAR99
- Vgsth Max Id
- 4V @ 250μA
- Terminal Sayısı
- 3
- Pin Sayısı
- 3
- Rise Time
- 46ns
- Case Connection
- ISOLATED
- Power Dissipation
- 38W
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