Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate To Source Voltage Vgs
- 30V
- Fet Type
- N-Channel
- Gate Charge Qg Max Vgs
- 94nC @ 10V
- Power Dissipation Max
- 66W Tc
- Voltage Rated Dc
- 150V
- Input Capacitance Ciss Max Vds
- 3030pF @ 25V
- Kılıf / Paket
- TO-220-3 Full Pack
- Drainsource On Resistancemax
- 0.04Ohm
- Kurşunsuz
- Lead Free
- Rds On Max Id Vgs
- 40m Ω @ 22.5A, 10V
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 45A
- Montaj Tipi
- Through Hole
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kurşunsuz Kodu
- yes
- Vgs Max
- ±30V
- Parça Durumu
- Active
- Fall Time Typ
- 246 ns
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
- JESD-609 Kodu
- e3
- Element Configuration
- Single
- Yayın Yılı
- 2013
- Radyasyon Dayanımı
- No
- Akım Değeri
- 45A
- Jedec95 Code
- TO-220AB
- RoHS Durumu
- ROHS3 Compliant
- Turn Off Delay Time
- 224 ns
- Number Of Elements
- 1
- Current Continuous Drain Id25
- 45A Tc
- Seri
- QFET®
- Ambalaj
- Tube
- Turn On Delay Time
- 22 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Pin Sayısı
- 3
- Montaj
- Through Hole
- ECCN Kodu
- EAR99
- Drain To Source Breakdown Voltage
- 150V
- Terminal Kaplaması
- Tin (Sn)
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