Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 5.2nC @ 10V
- Voltage Rated Dc
- 250V
- Power Dissipation Max
- 27W Tc
- Input Capacitance Ciss Max Vds
- 170pF @ 25V
- Rds On Max Id Vgs
- 2.2 Ω @ 1.15A, 10V
- Pulsed Drain Currentmax Idm
- 9.2A
- Continuous Drain Current Id
- 2.3A
- Avalanche Energy Rating Eas
- 40 mJ
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Lifecycle Status
- ACTIVE (Last Updated: 1 week ago)
- JESD-609 Kodu
- e3
- Vgs Max
- ±30V
- Turn Off Delay Time
- 5.5 ns
- Number Of Elements
- 1
- Ambalaj
- Tube
- Current Continuous Drain Id25
- 2.3A Tc
- Pin Sayısı
- 3
- Vgsth Max Id
- 5V @ 250μA
- Terminal Sayısı
- 3
- ECCN Kodu
- EAR99
- Power Dissipation
- 27W
- Transistor Application
- SWITCHING
- Weight
- 2.27g
- HTS Kodu
- 8541.29.00.95
- Case Connection
- ISOLATED
- Rise Time
- 25ns
- Gate To Source Voltage Vgs
- 30V
- Fet Type
- N-Channel
- Kılıf / Paket
- TO-220-3 Full Pack
- Kurşunsuz
- Lead Free
- Transistor Element Material
- SILICON
- Kurşunsuz Kodu
- yes
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fall Time Typ
- 20 ns
- Parça Durumu
- Active
- RoHS Durumu
- ROHS3 Compliant
- Akım Değeri
- 2.3A
- Radyasyon Dayanımı
- No
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