Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- TO-220-3 Full Pack
- Input Capacitance Ciss Max Vds
- 1500pF @ 25V
- Voltage Rated Dc
- 100V
- Power Dissipation Max
- 41W Tc
- Gate Charge Qg Max Vgs
- 51nC @ 10V
- Fet Type
- N-Channel
- Gate To Source Voltage Vgs
- 25V
- Kurşunsuz Kodu
- yes
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Montaj Tipi
- Through Hole
- Continuous Drain Current Id
- 18A
- Transistor Element Material
- SILICON
- Pulsed Drain Currentmax Idm
- 72A
- Rds On Max Id Vgs
- 52m Ω @ 9A, 10V
- Kurşunsuz
- Lead Free
- Drainsource On Resistancemax
- 0.052Ohm
- Ambalaj
- Tube
- Seri
- QFET®
- Current Continuous Drain Id25
- 18A Tc
- Number Of Elements
- 1
- Turn Off Delay Time
- 80 ns
- RoHS Durumu
- ROHS3 Compliant
- Akım Değeri
- 18A
- Yayın Yılı
- 2013
- Radyasyon Dayanımı
- No
- Element Configuration
- Single
- Lifecycle Status
- ACTIVE (Last Updated: 1 week ago)
- JESD-609 Kodu
- e3
- Parça Durumu
- Active
- Fall Time Typ
- 110 ns
- Vgs Max
- ±25V
- Case Connection
- ISOLATED
- Rise Time
- 195ns
- Transistor Application
- SWITCHING
- Fabrika Tedarik Süresi
- 4 Weeks
- Power Dissipation
- 41W
- Weight
- 2.27g
- Vgsth Max Id
- 4V @ 250μA
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