FQPF32N20C

Specifications

Kılıf / Paket

TO-220-3 Full Pack

Fet Type

N-Channel

Gate To Source Voltage Vgs

30V

Kurşunsuz Kodu

yes

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Through Hole

Transistor Element Material

SILICON

Drainsource On Resistancemax

0.082Ohm

Kurşunsuz

Lead Free

Seri

QFET®

RoHS Durumu

ROHS3 Compliant

Jedec95 Code

TO-220AB

Akım Değeri

28A

Radyasyon Dayanımı

No

Yayın Yılı

2013

Element Configuration

Single

Fall Time Typ

210 ns

Parça Durumu

Active

Fabrika Tedarik Süresi

4 Weeks

Terminal Kaplaması

Tin (Sn)

Drain To Source Breakdown Voltage

200V

Montaj

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Turn On Delay Time

25 ns

Input Capacitance Ciss Max Vds

2220pF @ 25V

Voltage Rated Dc

200V

Power Dissipation Max

50W Tc

Gate Charge Qg Max Vgs

110nC @ 10V

Avalanche Energy Rating Eas

955 mJ

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

28A

Rds On Max Id Vgs

82m Ω @ 14A, 10V

Ambalaj

Tube

Current Continuous Drain Id25

28A Tc

Number Of Elements

1

Turn Off Delay Time

245 ns

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

JESD-609 Kodu

e3

Vgs Max

±30V