Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- TO-220-3 Full Pack
- Gate To Source Voltage Vgs
- 20V
- Fet Type
- N-Channel
- Kurşunsuz Kodu
- yes
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yükseklik
- 16.07mm
- Drainsource On Resistancemax
- 0.045Ohm
- Kurşunsuz
- Lead Free
- Transistor Element Material
- SILICON
- Seri
- QFET®
- Genişlik
- 4.9mm
- Fall Time Typ
- 110 ns
- Parça Durumu
- Active
- RoHS Durumu
- ROHS3 Compliant
- Akım Değeri
- 22.5A
- Radyasyon Dayanımı
- No
- Yayın Yılı
- 2013
- Element Configuration
- Single
- Fabrika Tedarik Süresi
- 4 Weeks
- Uzunluk
- 10.36mm
- Montaj
- Through Hole
- Drive Voltage Max Rds On Min Rds On
- 5V 10V
- Turn On Delay Time
- 15 ns
- Terminal Kaplaması
- Tin (Sn)
- Drain To Source Breakdown Voltage
- 60V
- Voltage Rated Dc
- 60V
- Power Dissipation Max
- 38W Tc
- Input Capacitance Ciss Max Vds
- 1040pF @ 25V
- Gate Charge Qg Max Vgs
- 20nC @ 5V
- Continuous Drain Current Id
- 22.5A
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Rds On Max Id Vgs
- 35m Ω @ 11.3A, 10V
- Pulsed Drain Currentmax Idm
- 90A
- Number Of Elements
- 1
- Turn Off Delay Time
- 60 ns
- Ambalaj
- Tube
- Current Continuous Drain Id25
- 22.5A Tc
- JESD-609 Kodu
- e3
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