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Specifications
- Input Capacitance Ciss Max Vds
- 235pF @ 25V
- Power Dissipation Max
- 23W Tc
- Voltage Rated Dc
- 600V
- Gate Charge Qg Max Vgs
- 12nC @ 10V
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Continuous Drain Current Id
- 2A
- Drain Currentmax Abs Id
- 2A
- Pulsed Drain Currentmax Idm
- 8A
- Rds On Max Id Vgs
- 4.7 Ω @ 1A, 10V
- Ambalaj
- Tube
- Current Continuous Drain Id25
- 2A Tc
- Turn Off Delay Time
- 24 ns
- Number Of Elements
- 1
- Threshold Voltage
- 4V
- Vgs Max
- ±30V
- JESD-609 Kodu
- e3
- Lifecycle Status
- ACTIVE (Last Updated: 9 hours ago)
- Rise Time
- 25ns
- Case Connection
- ISOLATED
- Transistor Application
- SWITCHING
- Power Dissipation
- 23W
- Weight
- 2.27g
- ECCN Kodu
- EAR99
- Vgsth Max Id
- 4V @ 250μA
- Terminal Sayısı
- 3
- Direnç
- 4.7Ohm
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-220-3 Full Pack
- Fet Type
- N-Channel
- Gate To Source Voltage Vgs
- 30V
- Reach Svhc
- No SVHC
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yükseklik
- 9.19mm
- Kurşunsuz Kodu
- yes
- Transistor Element Material
- SILICON
- Kurşunsuz
- Lead Free
- Genişlik
- 4.7mm
- Seri
- QFET®
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