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Support
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Specifications
- Input Capacitance Ciss Max Vds
- 1400pF @ 25V
- Power Dissipation Max
- 47W Tc
- Voltage Rated Dc
- -60V
- Gate Charge Qg Max Vgs
- 43nC @ 10V
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Avalanche Energy Rating Eas
- 560 mJ
- Continuous Drain Current Id
- 17A
- Pulsed Drain Currentmax Idm
- 68A
- Drain To Source Voltage Vdss
- 60V
- Rds On Max Id Vgs
- 70m Ω @ 8.5A, 10V
- Current Continuous Drain Id25
- 17A Tc
- Ambalaj
- Tube
- Turn Off Delay Time
- 30 ns
- Number Of Elements
- 1
- Threshold Voltage
- -2V
- Vgs Max
- ±25V
- JESD-609 Kodu
- e3
- Lifecycle Status
- ACTIVE (Last Updated: 1 week ago)
- Rise Time
- 185ns
- Case Connection
- ISOLATED
- Weight
- 2.27g
- Power Dissipation
- 47W
- Transistor Application
- SWITCHING
- ECCN Kodu
- EAR99
- Direnç
- 70MOhm
- Terminal Sayısı
- 3
- Vgsth Max Id
- 4V @ 250μA
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-220-3 Full Pack
- Fet Type
- P-Channel
- Gate To Source Voltage Vgs
- 25V
- Reach Svhc
- No SVHC
- Yükseklik
- 16.3mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Through Hole
- Kurşunsuz Kodu
- yes
- Transistor Element Material
- SILICON
- Kurşunsuz
- Lead Free
- Genişlik
- 4.7mm
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