Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Voltage Rated Dc
- 250V
- Power Dissipation Max
- 55W Tc
- Kılıf / Paket
- TO-220-3 Full Pack
- Input Capacitance Ciss Max Vds
- 2450pF @ 25V
- Gate To Source Voltage Vgs
- 30V
- Fet Type
- N-Channel
- Gate Charge Qg Max Vgs
- 65nC @ 10V
- Continuous Drain Current Id
- 14A
- Kurşunsuz Kodu
- yes
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Avalanche Energy Rating Eas
- 600 mJ
- Rds On Max Id Vgs
- 110m Ω @ 7A, 10V
- Kurşunsuz
- Lead Free
- Pulsed Drain Currentmax Idm
- 56A
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
- Turn Off Delay Time
- 80 ns
- Current Continuous Drain Id25
- 14A Tc
- Ambalaj
- Tube
- Seri
- QFET®
- Parça Durumu
- Active
- Contact Plating
- Tin
- Fall Time Typ
- 120 ns
- Lifecycle Status
- ACTIVE (Last Updated: 6 days ago)
- JESD-609 Kodu
- e3
- Vgs Max
- ±30V
- Akım Değeri
- 14A
- RoHS Durumu
- ROHS3 Compliant
- Element Configuration
- Single
- Radyasyon Dayanımı
- No
- Yayın Yılı
- 2013
- Weight
- 2.27g
- Transistor Application
- SWITCHING
- Fabrika Tedarik Süresi
- 9 Weeks
- Power Dissipation
- 55W
- Case Connection
- ISOLATED
- Rise Time
- 270ns
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