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Support
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Specifications
- Input Capacitance Ciss Max Vds
- 630pF @ 25V
- Voltage Rated Dc
- 60V
- Power Dissipation Max
- 30W Tc
- Gate Charge Qg Max Vgs
- 13nC @ 5V
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Continuous Drain Current Id
- 15.7A
- Pulsed Drain Currentmax Idm
- 62.8A
- Rds On Max Id Vgs
- 55m Ω @ 7.85A, 10V
- Ambalaj
- Tube
- Current Continuous Drain Id25
- 15.7A Tc
- REACH Uyumluluk Kodu
- not_compliant
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Turn Off Delay Time
- 35 ns
- Number Of Elements
- 1
- Threshold Voltage
- 1V
- JESD-609 Kodu
- e3
- Vgs Max
- ±20V
- Case Connection
- ISOLATED
- Rise Time
- 156ns
- Transistor Application
- SWITCHING
- Power Dissipation
- 30W
- Weight
- 2.27g
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Vgsth Max Id
- 2.5V @ 250μA
- Terminal Sayısı
- 3
- ECCN Kodu
- EAR99
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-220-3 Full Pack
- Fet Type
- N-Channel
- Reach Svhc
- No SVHC
- Gate To Source Voltage Vgs
- 20V
- Kurşunsuz Kodu
- yes
- Yükseklik
- 9.19mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Through Hole
- Transistor Element Material
- SILICON
- Kurşunsuz
- Lead Free
- Drainsource On Resistancemax
- 0.07Ohm
- Seri
- QFET®
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