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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Input Capacitance Ciss Max Vds
- 590pF @ 25V
- Power Dissipation Max
- 30W Tc
- Voltage Rated Dc
- 60V
- Gate Charge Qg Max Vgs
- 15nC @ 10V
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Continuous Drain Current Id
- 15A
- Pulsed Drain Currentmax Idm
- 60A
- Rds On Max Id Vgs
- 60m Ω @ 7.5A, 10V
- Current Continuous Drain Id25
- 15A Tc
- Ambalaj
- Tube
- Turn Off Delay Time
- 20 ns
- Number Of Elements
- 1
- Vgs Max
- ±25V
- JESD-609 Kodu
- e3
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
- Rise Time
- 45ns
- Case Connection
- ISOLATED
- Weight
- 2.27g
- Power Dissipation
- 30W
- Transistor Application
- SWITCHING
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 3
- Vgsth Max Id
- 4V @ 250μA
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-220-3 Full Pack
- Fet Type
- N-Channel
- Gate To Source Voltage Vgs
- 25V
- Yükseklik
- 16.07mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Through Hole
- Kurşunsuz Kodu
- yes
- Transistor Element Material
- SILICON
- Drainsource On Resistancemax
- 0.06Ohm
- Kurşunsuz
- Lead Free
- Genişlik
- 4.9mm
- Seri
- QFET®
- Element Configuration
- Single
- Yayın Yılı
- 2013
- Radyasyon Dayanımı
- No
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