Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- JESD-609 Kodu
- e3
- Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- Parça Durumu
- Active
- Fall Time Typ
- 65 ns
- Vgs Max
- ±25V
- RoHS Durumu
- ROHS3 Compliant
- Akım Değeri
- 19A
- Yayın Yılı
- 2013
- Radyasyon Dayanımı
- No
- Element Configuration
- Single
- Number Of Elements
- 1
- Turn Off Delay Time
- 20 ns
- Ambalaj
- Tube
- Seri
- QFET®
- Current Continuous Drain Id25
- 13.6A Tc
- Montaj
- Through Hole
- Pin Sayısı
- 3
- Turn On Delay Time
- 7.5 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Vgsth Max Id
- 4V @ 250μA
- Terminal Sayısı
- 3
- Terminal Kaplaması
- Tin (Sn)
- Drain To Source Breakdown Voltage
- 100V
- ECCN Kodu
- EAR99
- Power Dissipation
- 38W
- Fabrika Tedarik Süresi
- 4 Weeks
- Transistor Application
- SWITCHING
- Weight
- 2.27g
- Case Connection
- ISOLATED
- Rise Time
- 150ns
- Gate To Source Voltage Vgs
- 25V
- Gate Charge Qg Max Vgs
- 25nC @ 10V
- Fet Type
- N-Channel
- Voltage Rated Dc
- 100V
- Power Dissipation Max
- 38W Tc
- Kılıf / Paket
- TO-220-3 Full Pack
- Input Capacitance Ciss Max Vds
- 780pF @ 25V
- Rds On Max Id Vgs
- 100m Ω @ 6.8A, 10V
- Kurşunsuz
- Lead Free
- Transistor Element Material
- SILICON
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