Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Rds On Max Id Vgs
- 270m Ω @ 4.75A, 10V
- Kurşunsuz
- Lead Free
- Drainsource On Resistancemax
- 0.27Ohm
- Kurşunsuz Kodu
- yes
- Montaj Tipi
- Through Hole
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Operating Mode
- ENHANCEMENT MODE
- Continuous Drain Current Id
- 9.5A
- Fet Type
- N-Channel
- Gate Charge Qg Max Vgs
- 60nC @ 10V
- Gate To Source Voltage Vgs
- 30V
- Kılıf / Paket
- TO-220-3 Full Pack
- Input Capacitance Ciss Max Vds
- 2300pF @ 25V
- Voltage Rated Dc
- 400V
- Power Dissipation Max
- 56W Tc
- Terminal Kaplaması
- Tin (Sn)
- Terminal Sayısı
- 3
- Vgsth Max Id
- 5V @ 250μA
- ECCN Kodu
- EAR99
- Drain To Source Breakdown Voltage
- 400V
- Turn On Delay Time
- 40 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Pin Sayısı
- 3
- Montaj
- Through Hole
- Rise Time
- 185ns
- Weight
- 2.27g
- Power Dissipation
- 56W
- Fabrika Tedarik Süresi
- 4 Weeks
- Transistor Application
- SWITCHING
- Akım Değeri
- 16A
- RoHS Durumu
- ROHS3 Compliant
- Element Configuration
- Single
- Radyasyon Dayanımı
- No
- Yayın Yılı
- 2013
- Parça Durumu
- Active
- Fall Time Typ
- 105 ns
- Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- JESD-609 Kodu
- e3
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