FQPF16N15

Specifications

Gate Charge Qg Max Vgs

30nC @ 10V

Input Capacitance Ciss Max Vds

910pF @ 25V

Power Dissipation Max

53W Tc

Voltage Rated Dc

150V

Pulsed Drain Currentmax Idm

46.4A

Rds On Max Id Vgs

160m Ω @ 5.8A, 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

11.6A

Vgs Max

±25V

Lifecycle Status

LAST SHIPMENTS (Last Updated: 23 hours ago)

JESD-609 Kodu

e3

Ambalaj

Tube

Current Continuous Drain Id25

11.6A Tc

Turn Off Delay Time

50 ns

Number Of Elements

1

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

Vgsth Max Id

4V @ 250μA

Terminal Sayısı

3

Pin Sayısı

3

Rise Time

115ns

Case Connection

ISOLATED

Transistor Application

SWITCHING

Power Dissipation

53W

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Weight

2.27g

Fet Type

N-Channel

Gate To Source Voltage Vgs

25V

Kılıf / Paket

TO-220-3 Full Pack

Transistor Element Material

SILICON

Kurşunsuz

Lead Free

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yükseklik

9.19mm

Kurşunsuz Kodu

yes

Yayın Yılı

2000

Element Configuration

Single

RoHS Durumu

RoHS Compliant

Akım Değeri

16.4A