FQPF13N06L

Specifications

Kurşunsuz Kodu

yes

Yükseklik

9.19mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Through Hole

Kurşunsuz

Lead Free

Transistor Element Material

SILICON

Kılıf / Paket

TO-220-3 Full Pack

Reach Svhc

No SVHC

Gate To Source Voltage Vgs

20V

Fet Type

N-Channel

Qualification Status

Not Qualified

Fabrika Tedarik Süresi

4 Weeks

Uzunluk

10.16mm

Montaj

Through Hole

Drive Voltage Max Rds On Min Rds On

5V 10V

Turn On Delay Time

8 ns

Terminal Kaplaması

Tin (Sn)

Drain To Source Breakdown Voltage

60V

Seri

QFET®

Genişlik

4.7mm

Parça Durumu

Active

Fall Time Typ

40 ns

Akım Değeri

13.6A

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2001

Element Configuration

Single

Continuous Drain Current Id

10A

Avalanche Energy Rating Eas

90 mJ

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~175°C TJ

Rds On Max Id Vgs

110m Ω @ 5A, 10V

Pulsed Drain Currentmax Idm

40A

Voltage Rated Dc

60V

Power Dissipation Max

24W Tc

Input Capacitance Ciss Max Vds

350pF @ 25V

Gate Charge Qg Max Vgs

6.4nC @ 5V

Transistor Application

SWITCHING

Power Dissipation

24W

Weight

2.27g

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED