FQPF13N06

Specifications

Fet Type

N-Channel

Gate Charge Qg Max Vgs

7.5nC @ 10V

Kılıf / Paket

TO-220-3 Full Pack

Input Capacitance Ciss Max Vds

310pF @ 25V

Power Dissipation Max

24W Tc

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

40A

Rds On Max Id Vgs

135m Ω @ 4.7A, 10V

Drainsource On Resistancemax

0.14Ohm

Drain To Source Voltage Vdss

60V

Terminal Pozisyonu

SINGLE

Kurşunsuz Kodu

yes

Montaj Tipi

Through Hole

Çalışma Sıcaklığı

-55°C~175°C TJ

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Avalanche Energy Rating Eas

90 mJ

Drain Currentmax Abs Id

10A

Yayın Yılı

2001

Parça Durumu

Obsolete

Yüzey Montaj

NO

JESD-609 Kodu

e3

Vgs Max

±25V

Ds Breakdown Voltagemin

60V

Current Continuous Drain Id25

9.4A Tc

Seri

QFET®

Ambalaj

Tube

Jesd30 Code

R-PSFM-T3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

REACH Uyumluluk Kodu

not_compliant

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

3

Vgsth Max Id

4V @ 250μA

ECCN Kodu

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

ISOLATED

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Application

SWITCHING